Prof. Min-kyu Joo reported on quantum tunneling in ambipolar multilayer black phosphorus materials
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- Writer 커뮤니케이션팀
- 보도일자 2021-12-31
Professor Min-kyu Joo of the Department of Applied Physics at Sookmyung Women’s University has observed room temperature quantum tunneling by inducing a bipolar channel in the charge neutral region of Black Phosphorus (BP), a next-generation two-dimensional bipolar semiconductor material, and reported the possibility of application as a future quantum device.
This research was conducted jointly with Professor Min-kyu Joo of the Department of Applied Physics and Professor Gyu-tae Kim of the Department of Electrical Engineering at Korea University, and was published online on December 16 (Thu) in Advanced Functional Materials (IF = 18.808, top 4.69% in applied physics), which is an authoritative journal in the field of materials. Ye-eun Kim, a student in the Department of Applied Physics, a graduate school of Sookmyung Women’s University, participated as the lead author, and students Su-yeon Kim and Yu-kyung Seo participated as co-authors.
(Title of Paper: Emergence of Quantum Tunneling in Ambipolar Black Phosphorus Multilayers without Heterojunctions)
Negative Differential Resistance (NDR) is a unique quantum tunneling phenomenon in highly concentrated pn junctions. Recently, NDR phenomena have been reported in various two-dimensional (2D) van der Waals heterojunction tunneling field devices. However, in many cases, it was difficult to achieve deep understanding on the origin of NDRs, such as heterojunction interfacial oxidation and defects, and the effect of the Schootky barrier.
To solve this intrinsically, our research team focused on the charge-neutral region of a bipolar two-dimensional material that can provide both electrons and positive holes. An electric field device without heterojunctions was fabricated using bipolar multilayer black phosphorus with high charge mobility, and quantum tunneling in the charge neutral region was reported. An ideal p＋-i-n＋ charge density was formed by precisely controlling the drain voltage, and a band-to-band tunneling (BTBT) phenomenon was induced in the depletion regime within the channel. NDR dependence according to BP thickness and temperature change was analyzed, and the cause of the change in Peak-to-Valley Current Ratio (PVCR) was explored.
Professor Min-kyu Joo said, "The results of this research are expected to greatly contribute to the development of future quantum electronic devices, such as bipolar two-dimensional material-based multi-logic inverters and neural-mimicking semiconductors." to explain the significance of the findings.
