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An undergraduate student reports a circuit characteristics control technique using printing

  • Views 1374
  • Writer 커뮤니케이션팀
  • 보도일자 2022-06-20

Student Ji-hyeon Lee (Department of Electronics Engineering, ‘18) from the Division of ICT Convergence Engineering at Sookmyung Women’s University collaborated with Graduate Student Seo-yeon Jeong (Department of Electronics Engineering, ‘22) and developed a control technique that can easily test the operating characteristics of the next-generation low-dimensional semiconductor material-based circuit using a printing technique. The research was conducted in collaboration with the research team of Professor Bong-Jun Kim of Sookmyung Women’s University and the research teams of Hongik University and Sungkyunkwan University, and the results were published in Nanotechnology (IF: 3.874), an international journal (SCIE) on May 6th.

 

Title of Paper: Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printing, Lead authors: Seo-yeon Jeong/Ji-hyun Lee, Corresponding author: Bong-jun Kim)

 

(From left to right) Student Ji-hyun Lee, Graduate Student Seo-yeon Jeong, Professor Bong-jun Kim


Single-layer molybdenum disulfide (MoS2), which is a representative two-dimensional semiconductor material, is an n-type semiconductor material that is receiving great attention, but it is essential to use other semiconductor materials having p-type characteristics for practical circuit applications. However, the use of different n-type and p-type semiconductor materials showing a large performance difference necessitates the use of an additional chip area to balance device characteristics, which significantly lowers the degree of integration of the device. In particular, in the case of MoS2 formed using chemical vapor deposition (CVD), which is capable of large-area processing, the space between randomly grown MoS2 crystals is limited, so it was very difficult to form a channel of a p-type device with balanced characteristics in the immediate vicinity of n-type MoS2. From left to right) Student Ji-hyun Lee, Graduate Student Seo-yeon Jeong, Professor Bong-jun Kim

 

(From left to right) Student Ji-hyun Lee, Graduate Student Seo-yeon Jeong, Professor Bong-jun Kim
[Control of inverter circuit characteristics by controlling the number of inkjet printing proposed in this study]


Accordingly, Professor Bong-Jun Kim's research team formed a carbon nanotube layer, a one-dimensional semiconductor material with p-type properties, using inkjet printing technology. They proposed a technique for easily balancing characteristics with an n-type device without using additional chip area by controlling the number of inkjet printing. A technology that can change the characteristics of individual devices by controlling the thickness and density of the channel layer by adjusting the number of stacked carbon nanotubes, and a technology capable of adjusting the switching voltage threshold of an inverter circuit, one of the basic unit circuits of a digital circuit, to a desired value by changing individual device characteristics was verified through experiments.


Professor Bong-Jun Kim said, “It is even more meaningful that the two students achieved good results through the research they started as undergraduate research students in the Nanoelectronic Device Lab and completed it brilliantly,” and “through this research, we expect that it will be of great help to the practical application of next-generation semiconductor material-based integrated circuits.” Student Ji-hyeon Lee said, “I was delighted to participate in the research as an undergraduate research student and propose a way to solve the problems that existed while using next-generation semiconductor materials. I hope that this study will be helpful for future research on inkjet printing-based next-generation semiconductor devices.”